EXTENSION OF LASING WAVELENGTHS BEYOND 0.87 MU M IN GAAS/AL_XGA_1-XAS DOUBLE-HETEROSTRUCTURE LASERS BY IR INCORPORATION IN THE GAAS ACTIVE LAYERS DURING MOLECULAR BEAM EPITAXYTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 9; PP. 661-663; BIBL. 18 REF.Article

LOW-CURRENT-THRESHOLD AND HIGH-LASING UNIFORMITY GAAS-AL_XGA_1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 7; PP. 473-475; BIBL. 18 REF.Article

THE EFFECTS OF LATERAL CURRENT SPREADING, CARRIER OUT-DIFFUSION, AND OPTICAL MODE LOSSES ON THE THRESHOLD CURRENT DENSITY OF GAAS-AL_XGA_1-XAS STRIPE-GEOMETRY DH LASERS.TSANG WT.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 3 PART. 1; PP. 1031-1044; BIBL. 36 REF.Article

IN SITU OHMIC-CONTACT FORMATION TO N- AND P-GAAS BY MOLECULAR BEAM EPITAXYTSANG WT.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 12; PP. 1022-1025; BIBL. 14 REF.Article

THEORETICAL MODELING OF THE SIMULTANEOUS EXPOSURE AND DEVELOPMENT (SED) PROCESS OF A POSITIVE PHOTORESIST.TSANG WT.1977; APPL. OPT.; U.S.A.; DA. 1977; VOL. 16; NO 7; PP. 1918-1930; BIBL. 29 REF.Article

A GRADED-INDEX WAVEGUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN BEAMTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 2; PP. 134-137; BIBL. 14 REF.Article

INFRARED VISIBLE (0.89-0.72 MU M) AL_XGA_1-XAS/AL_YGA_1-YAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT.1980; J. APPL. PHYS; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 917-919; BIBL. 15 REF.Article

DEVICE CHARACTERISTICS OF (ALGA)AS MULTIQUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 204-207; BIBL. 13 REF.Article

HIGH-THROUGH-PUT, HIGH-YIELD, AND HIGHLY-REPRODUCTIBLE (ALGA) AS DOUBLE-HETEROSTRUCTURE LASER WAFERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 8; PP. 587-589; BIBL. 6 REF.Article

A NEW CURRENT-INJECTION HETEROSTRUCTURE LASER: THE DOUBLE-BARRIER DOUBLE-HETEROSTRUCTURE LASERTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 835-837; BIBL. 11 REF.Article

(ALGA)AS STRIP BURIED-HETEROSTRUCTURE LASERS PREPARED BY HYBRID CRYSTAL GROWTHTSANG WT; LOGAN RA.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 397-398; BIBL. 9 REF.Article

CW NARROW BEAM (ALGA)AS MULTIQUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT; HARTMAN RL.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 7; PP. 502-504; BIBL. 19 REF.Article

LATERAL-CURRENT CONFINEMENT IN A GAAS PLANAR STRIPE-GEOMETRY AND CHANNELED SUBSTRATE BURIED DH LASER USING REVERSE-BIASED P-N JUNCTIONS.TSANG WT; LOGAN RA.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 5; PP. 2629-2638; BIBL. 30 REF.Article

CW ELECTRO-OPTICAL CHARACTERISTICS OF GRADED-INDEX WAVEGUIDE SEPARATE-CONFINEMENT HETEROSTRUCTURE LASERS WITH PROTON-DELINEATED STRIPETSANG WT; HARTMAN RL.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 7; PP. 551-553; BIBL. 17 REF.Article

THE EFFECT OF AS/GA FLUX RATIO ON THE PHOTOLUMINESCENT SPECTRA FROM MOLECULAR BEAM EPITAXIALLY-GROWN SN-DOPED AL_XGA_1-XASTSANG WT; SWAMINATHAN V.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 486-487; BIBL. 8 REF.Article

DEVELOPMENT OF SELF-PULSATIONS DUE TO SELF-ANNEALING OF PROTON BOMBARDED REGIONS DURING AGING IN PROTON BOMBARDED STRIPE-GEOMETRY ALGAAS DH LASERS GROWN BY MOLECULAR BEAM EPITOXYSCHORR AJ; TSANG WT.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 8; PP. 898-901; BIBL. 14 REF.Article

LATERAL CURRENT CONFINEMENT BY REVERSE-BIASED JUNCTIONS IN GAASAL_XGA_1-XAS DH LASERS.TSANG WT; LOGAN RA.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 10; PP. 538-540; BIBL. 17 REF.Article

AL-GA DISORDER IN AL_XGA_1-XAS ALLOYS GROWN BY MOLECULAR BEAM EPITAXYMILLER RC; TSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 4; PP. 334-335; BIBL. 7 REF.Article

SELECTIVE AREA GROWTH OF GAAS/AL_XGA_1-XAS MULTILAYER STRUCTURES WITH MOLECULAR BEAM EPITAXY USING SI SHADOW MASKS.TSANG WT; ILEGEMS M.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 4; PP. 301-304; BIBL. 5 REF.Article

NEW CURRENT INJECTION 1.5 MU M WAVELENGTH GA_XAL_YIN_1-X-YAS/INP DOUBLE-HETEROSTRUCTURE LASER GROWN BY MOLECULAR BEAM EPITAXYTSANG WT; OLSSON NA.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 922-924; BIBL. 8 REF.Article

GAAS-AL_XGA_1-XAS BURIED-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXY WITH AL_0.65AL_0.65GA_0.35AS(GE-DOPED) LIQUID PHASE EPITAXY OVERGROWN LAYER FOR CURRENT INJECTION CONFINEMENTTSANG WT; LOGAN RA.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 730-733; BIBL. 12 REF.Article

THE PREPARATION OF GAAS THIN-FILM OPTICAL COMPONENTS BY MOLECULAR BEAM EPITAXY USING SI SHADOW MASKING TECHNIQUETSANG WT; ILLEGEMS M.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 10; PP. 792-795; BIBL. 12 REF.Article

INTEGRATED MULTILAYER GAAS LASERS SEPARATED BY TUNNEL JUNCTIONSVAN DER ZIEL JP; TSANG WT.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 6; PP. 499-501; BIBL. 9 REF.Article

THE HIGH-TEMPERATURE (55-70^OC) DEVICE CHARACTERISTICS OF CW (ALGA)AS DOUBLE-HETEROSTRUCTURE PROTON-BOMBARDED STRIPE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT; HOLBROOK WR; FRALEY PE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 1; PP. 6-9; BIBL. 15 REF.Article

STRIPE-GEOMETRY LASER WITH IN-SITU OHMIC CONTACT AND SELF-ALIGNED NATIVE SURFACE OXIDE MASK FOR CURRENT ISOLATION PREPARED BY MOLECULAR BEAM EPITAXYTSANG WT; LOGAN RA; DITZENBERGER JA et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 123-124; BIBL. 9 REF.Article